Static time-of-flight secondary ion mass spectrometry analysis of microelectronics related substrates using a polyatomic ion source
✍ Scribed by X. Ravanel; C. Trouiller; M. Juhel; C. Wyon; L.F.Tz. Kwakman; D. Léonard
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 329 KB
- Volume
- 255
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract A series of cationic, zwitterionic and anionic fluorinated carbocyanine dyes, spin‐coated on Si substrates, were measured with time‐of‐flight static secondary ion mass spectrometry (TOF‐S‐SIMS) under Ga^+^ primary ion bombardment. Detailed fragmentation patterns were developed for all d
## Abstract Time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) using liquid metal ion guns (LMIGs) is now sensitive enough to produce molecular‐ion images directly from biological tissue samples. Primary cluster ions strike a spot on the sample to produce a mass spectrum. An image of this sa
Static time-of-flight secondary ion mass spectrometry (TOF-SIMS) has been used to characterize surface contaminants on a Pt-10% Ir alloy sample prescribed for fabrication of a prototype kilogram mass standard. The identification of various oxygenated and non-oxygenated hydrocarbon adsorbates on the