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State filling phenomena in modulation-doped InAs quantum dots

โœ Scribed by Young Min Park; Young Ju Park; Kwang Moo Kim; Jae Cheol Shin; Jin Dong Song; Jung Il Lee; Keon-Ho Yoo

Book ID
108165913
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
211 KB
Volume
271
Category
Article
ISSN
0022-0248

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We present the carrier relaxation of modulation-doped InAs=GaAs quantum dots depending on the excitation wavelength and modulation-doping concentration by using the time-resolved spectroscopy. At the excitation below GaAs band gap, the relaxation processes become very slow, implying the observation