Carrier relaxation of modulation-doped InAs/GaAs quantum dots

✍ Scribed by Joo In Lee; Jae-Young Leem; Hyung Gyoo Lee

• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 148 KB
• Volume: 15
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)00513-1

✦ Synopsis

We present the carrier relaxation of modulation-doped InAs=GaAs quantum dots depending on the excitation wavelength and modulation-doping concentration by using the time-resolved spectroscopy. At the excitation below GaAs band gap, the relaxation processes become very slow, implying the observation of phonon bottleneck e ects. On the other hand, at excitation far above GaAs band gap, phonon bottleneck e ects are broken down due to Auger processes. Increasing modulation-doping concentration, Coulomb scattering between electrons in GaAs-doped layer and carriers in InAs quantum dots makes the relaxation times become fast.