In an adiabatic approach, the efficiency of the electron-phonon interaction (EPI) can be determined by measuring the ratio between the intensities of two of the phonon replicas that EPI induces in photoluminescence (PL) spectra. In low-dimensional structures such as InAs/GaAs quantum dots (QDs), thi
Resonant photoluminescence from modulation-doped InAs –GaAs quantum dots
✍ Scribed by C. Guasch; C.M. Sotomayor Torres; N.N. Ledentsov; D. Bimberg; V.M. Ustinov; P.S. Kop'ev
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 154 KB
- Volume
- 21
- Category
- Article
- ISSN
- 0749-6036
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Magneto-optical properties and resonant Raman spectroscopy of modulation doped GaAs-AlGaAs quantum well wires are reported. Their properties are compared with similar undoped quantum well wires to investigate the many electron effects in nanostructures. In undoped samples, the quantised energy level