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State filling in InAs quantum-dot laser structures

✍ Scribed by Osborne, S.; Blood, P.; Smowton, P.; Lutti, J.; Xin, Y.C.; Stintz, A.; Huffaker, D.; Lester, L.F.


Book ID
117882831
Publisher
IEEE
Year
2004
Tongue
English
Weight
243 KB
Volume
40
Category
Article
ISSN
0018-9197

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## Abstract InAs/GaInAsP quantum dot (QD) structure grown by gas source molecular beam epitaxy on InP (100) substrate and designed as an active region for laser applications at 1.55 ΞΌm wavelength range has been investigated by optical spectroscopy in order to probe its energy electronic structure.