InAsβGaAs self-assembled quantum dot las
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D.J. Mowbray; L. Harris; P.W. Fry; A.D. Ashmore; S.R. Parnell; J.J. Finley; M.S.
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Article
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2000
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Elsevier Science
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English
β 129 KB
The gain characteristics of InAs-GaAs self-assembled quantum dot lasers are studied using two complementary techniques. The modal gain is derived from a measurement of the normal incidence, inter-band photoconductivity. For a device containing a single layer of dots the maximum modal gain of the gro