InAs–GaAs self-assembled quantum dot lasers: physical processes and device characteristics

✍ Scribed by D.J. Mowbray; L. Harris; P.W. Fry; A.D. Ashmore; S.R. Parnell; J.J. Finley; M.S. Skolnick; M. Hopkinson; G. Hill; J. Clark

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 129 KB
• Volume: 7
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(99)00371-9

✦ Synopsis

The gain characteristics of InAs-GaAs self-assembled quantum dot lasers are studied using two complementary techniques. The modal gain is derived from a measurement of the normal incidence, inter-band photoconductivity. For a device containing a single layer of dots the maximum modal gain of the ground state transition is found to be insu cient for lasing action. As a consequence lasing occurs for excited state transitions, which have a larger oscillator strength, with the precise transition being dependent upon the device cavity length. The second technique uses the Hakki-Paoli method to determine the spectral and current dependence of the gain. A quasi-periodic modulation of the below threshold gain is observed. This modulation is shown to be responsible for the form of the lasing spectra, which consist of groups of lasing modes separated by non-lasing spectral regions. Possible mechanisms for this behaviour are discussed.