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Effects of charge accumulation on the photocurrent and photoluminescence characteristics of self-assembled InAs/GaAs quantum dots

✍ Scribed by A.F.G Monte; J.J Finley; I Itskevitch; M.S Skolnick; D.J Mowbray; M Hopkins

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
79 KB
Volume
17
Category
Article
ISSN
1386-9477

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Photoluminescence studies of self-assemb
Photoluminescence studies of self-assembled InAs quantum dots formed on InGaAs/GaAs quantum well
✍ X. Mu; Y. J. Ding; Z. Wang; G. J. Salamo πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 398 KB

We have characterized self-assembled InAs quantum dots grown on the top of a single InGaAs/GaAs quantum well (QD's:QW) by measuring photoluminescence (PL) spectra as an effective technique. We have found that the linewidths of the PL peaks for the QD's:QW are narrower than that for the InAs quantum