We have investigated temperature dependent photoluminescence of both buried and surface selfassembled InAs/GaAs quantum dots with an areal density up to $ 10 11 /cm 2 . Different from the buried quantum dots, the peak energy of surface quantum dots shows a blueshift relative to the bulk material var
Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields
โ Scribed by T. Nuytten; M. Hayne; M. Henini; V.V. Moshchalkov
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 224 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0026-2692
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