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Polaron decay and inter-level transfer in InAs/GaAs self-assembled quantum dots

✍ Scribed by E. A. Zibik; L. R. Wilson; R. P. Green; G. Bastard; R. Ferreira; J.-P. R. Wells; P. J. Phillips; D. A. Carder; J. W. Cockburn; M. S. Skolnick; M. J. Steer; M. Hopkinson


Publisher
John Wiley and Sons
Year
2004
Tongue
English
Weight
146 KB
Volume
1
Category
Article
ISSN
1862-6351

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Molecular beam epitaxy has been used for growing self-assembled InAs quantum dots. A continuous variation of the InAs average coverage across the sample has been obtained by properly aligning the (001) GaAs substrate with respect to the molecular beam. Excitation of a large number of dots (laser spo