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Stacking number dependence of size distribution of vertically stacked InAs/GaAs quantum dots

✍ Scribed by Y. Furukawa; S. Noda; M. Ishii; A. Wakahara; A. Sasaki


Book ID
107457904
Publisher
Springer US
Year
1999
Tongue
English
Weight
462 KB
Volume
28
Category
Article
ISSN
0361-5235

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The optical transitions of the wetting layers in two-fold self-assembled InAs=GaAs quantum dot samples are studied as a function of GaAs spacer thickness by various methods. The absorption related studies by photore ectance and selective photoluminescence excitation spectroscopy reveal already for t