Photoconductive response of InAs/GaAs quantum dot stacks
β Scribed by S. Hofer; H. Hirner; R. Bratschitsch; G. Strasser; K. Unterrainer
- Book ID
- 104427846
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 105 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1386-9477
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π SIMILAR VOLUMES
The optical transitions of the wetting layers in two-fold self-assembled InAs=GaAs quantum dot samples are studied as a function of GaAs spacer thickness by various methods. The absorption related studies by photore ectance and selective photoluminescence excitation spectroscopy reveal already for t
We present a new method to design the energy level scheme of quantum dot (QD) structures by combining band gap engineering with the self-organized growth of (QDs). With the embedding of QDs in two-dimensional supperlattices optical transition energies, ionization energies and the absorption properti