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Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3

โœ Scribed by L. Bouzaiene; B. Ilahi; L. Sfaxi; F. Hassen; H. Maaref; O. Marty; J. Dazord


Book ID
106019145
Publisher
Springer
Year
2004
Tongue
English
Weight
583 KB
Volume
79
Category
Article
ISSN
1432-0630

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Effects of accumulated strain on the sur
โœ Tao Yang; Jun Tatebayashi; Masao Nishioka; Yasuhiko Arakawa ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 402 KB

We report the effects of accumulated strain by stacking on the surface and optical properties of stacked 1.3 mm InAs/GaAs quantum dot (QD) structures grown by MOCVD. It is found that the surface of the stacked QD structures becomes more and more undulated with stacking, due to the increased strain i