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Stacking fault probability in β-SiC grown by chemical vapour deposition

✍ Scribed by Yang-Ming Lu; Min-Hsiung Hon


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
812 KB
Volume
8
Category
Article
ISSN
0921-5107

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A transmission electron microscopy (TEM) study on the generation of stacking faults (SFs) and stacking fault (SF) induced inclusion during 3C-SiC growth by Continuous Feed Physical Vapour Transport (CF-PVT) method on 4H-SiC substrates is presented. A transition region of about 100 nm between the 4H-