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Stability of photodiodes under irradiation with a 157-nm pulsed excimer laser

โœ Scribed by Shaw, Ping-Shine ;Gupta, Rajeev ;Lykke, Keith R.

Book ID
115351839
Publisher
The Optical Society
Year
2005
Tongue
English
Weight
300 KB
Volume
44
Category
Article
ISSN
1559-128X

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โœ Dong-Joon Kim; Hyun-Min Kim; Myung-Geun Han; Yong-Tae Moon; Seonghoon Lee; Seong ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 67 KB

We report on the activation of Mg acceptors in Mg-doped GaN films, grown by metalorganic chemical vapor deposition, via the use of a pulsed KrF (248 nm) excimer laser irradiation. The as-grown GaN : Mg, which was irradiated by the KrF excimer laser at a laser energy density of 590 mJ/cm 2 in a N 2 a