Stability and interface abruptness of InxGa1−xN/InyGa1−yN multiple quantum well structures grown by OMVPE
✍ Scribed by J. C. Ramer; D. Zubia; G. Liu; S. D. Hersee
- Book ID
- 107457431
- Publisher
- Springer US
- Year
- 1997
- Tongue
- English
- Weight
- 243 KB
- Volume
- 26
- Category
- Article
- ISSN
- 0361-5235
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📜 SIMILAR VOLUMES
We calculate the transition energy from the first level of holes to the first level of electrons for cubic In x Ga 1Àx N/In y Ga 1Ày N quantum wells. We employ the empirical tight binding approach with an sp 3 s\* orbital basis, nearest neighbour interactions and the spin-orbit coupling, together wi
## Abstract Angular‐dependent reflection measurements were used to map out the dispersion relations of the resonant Bloch modes, and the angular dispersion of the phonon modes, in a photonic crystal consisting of selectively grown GaN pyramids containing a single In~__x__~Ga~1–__x__~N/GaN quantum w