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Modeling of optical gain in InGaN-AlGaN and InxGa1-xN-InyGa1-yN quantum-well lasers

✍ Scribed by Jain, F.; Huang, W.

Book ID
117868330
Publisher
IEEE
Year
1996
Tongue
English
Weight
612 KB
Volume
32
Category
Article
ISSN
0018-9197

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We calculate the transition energy from the first level of holes to the first level of electrons for cubic In x Ga 1Γ€x N/In y Ga 1Γ€y N quantum wells. We employ the empirical tight binding approach with an sp 3 s\* orbital basis, nearest neighbour interactions and the spin-orbit coupling, together wi