Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1-xN quantum well structure
✍ Scribed by Coquillat, D. ;Torres, J. ;Le Vassor d'Yerville, M. ;Legros, R. ;Lascaray, J. P. ;Liu, C. ;Watson, I. M. ;Martin, R. W. ;Chong, H. M. H. ;De La Rue, R. M.
- Book ID
- 105363069
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 550 KB
- Volume
- 202
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
Angular‐dependent reflection measurements were used to map out the dispersion relations of the resonant Bloch modes, and the angular dispersion of the phonon modes, in a photonic crystal consisting of selectively grown GaN pyramids containing a single In~x~Ga~1–x~N/GaN quantum well. The dispersion of the photons exhibits strong photonic crystal characteristics, while the mean indium content of the ∼2 nm thickness In~x~Ga~1–x~N layer was extracted from the angular dispersion of the phonon modes. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)