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SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 2 February 2013)] Gallium Nitride Materials and Devices VIII - Semipolar GaN growth on patterned sapphire substrates by hydride vapor phase epitaxy

✍ Scribed by Yamane, K.; Okada, N.; Furuya, H.; Tadatomo, K.; Chyi, Jen-Inn; Nanishi, Yasushi; Morkoç, Hadis; Piprek, Joachim; Yoon, Euijoon; Fujioka, Hiroshi

Book ID: 121319030
Publisher: SPIE
Year: 2013
Weight: 552 KB
Volume: 8625
Category: Article
DOI: 10.1117/12.2007376

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