SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 2 February 2013)] Gallium Nitride Materials and Devices VIII - Depth distribution of carrier lifetimes in semipolar (11macron01) GaN grown by MOCVD on patterned Si substrates

✍ Scribed by Izyumskaya, N.; Okur, S.; Zhang, F.; Avrutin, V.; Özgür, Ü.; Metzner, S.; Karbaum, C.; Bertram, F.; Christen, J.; Morkoç, H.; Chyi, Jen-Inn; Nanishi, Yasushi; Morkoç, Hadis; Piprek, Joachim; Yoon, Euijoon; Fujioka, Hiroshi

• Book ID: 120521495
• Publisher: SPIE
• Year: 2013
• Weight: 482 KB
• Volume: 8625
• Category: Article
• DOI: 10.1117/12.2005514