## Abstract Metalorganic vapor phase epitaxy of InN layers on sapphire was studied inβsitu by spectroscopic ellipsometry (SE), exβsitu atomic force microscopy and optical microscopy. Surface morphology has been largely improved by using nitrogen instead of hydrogen as carrier gas during sapphire ni
β¦ LIBER β¦
Spectroscopic ellipsometry during metalorganic vapor phase epitaxy of InN
β Scribed by T. Schmidtling; M. Drago; U.W. Pohl; W. Richter
- Book ID
- 108341740
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 219 KB
- Volume
- 248
- Category
- Article
- ISSN
- 0022-0248
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