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Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy

✍ Scribed by Zhang, Yuantao; Kimura, Takeshi; Prasertusk, Kiattiwut; Iwabuchi, Takuya; Kumar, Suresh; Liu, Yuhuai; Katayama, Ryuji; Matsuoka, Takashi


Book ID
122633846
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
535 KB
Volume
536
Category
Article
ISSN
0040-6090

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Raman-scattering characterization of InN
✍ Jung Gon Kim; Yasuhito Kamei; Atsuhito Kimura; Noriyuki Hasuike; Hiroshi Harima; 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 485 KB

## Abstract Improvement of hexagonal InN film quality grown by metal‐organic vapor phase epitaxy has been challenged by changing the ambient‐gas pressure in 87–320 kPa (∼1–3 atm.). The growth temperature and the source‐gas supply ratio, the so‐called V/III ratio, were optimized at each ambient‐gas