## Abstract Improvement of hexagonal InN film quality grown by metalโorganic vapor phase epitaxy has been challenged by changing the ambientโgas pressure in 87โ320โkPa (โผ1โ3โatm.). The growth temperature and the sourceโgas supply ratio, the soโcalled V/III ratio, were optimized at each ambientโgas
โฆ LIBER โฆ
High mobility InN films grown by metal-organic vapor phase epitaxy
โ Scribed by Chin-An Chang; Chuan-Feng Shih; Nai-Chuan Chen; Pen-Hsiu Chang; Kuo-Shiun Liu
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 128 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1862-6351
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