๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Specificity of mono- and disilane decomposition at silicon surface under conditions of epitaxial growth

โœ Scribed by Orlov, L. K.; Ivina, N. L.; Smyslova, T. N.

Book ID
121562118
Publisher
Springer
Year
2013
Tongue
English
Weight
318 KB
Volume
83
Category
Article
ISSN
1070-3632

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Surface hydrogen and growth mechanisms o
Surface hydrogen and growth mechanisms of synchrotron radiation-assisted silicon gas source molecular beam epitaxy using disilane
โœ Akitaka Yoshigoe; Shinya Hirano; Tsuneo Urisu ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 96 KB ๐Ÿ‘ 2 views

Surface hydrogen and growth mechanisms are investigated for synchrotron radiation (SR)assisted gas source molecular beam epitaxy (SR-GSMBE) using Si 2 H 6 on the Si(100) surface in the low-temperature region. The surface silicon hydrides (deuterides) are monitored in situ during the epitaxial growth