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Specific features of amorphous silicon layers grown by plasma-enhanced chemical vapor deposition with tetrafluorosilane

✍ Scribed by J. S. Vainshtein; O. I. Kon’kov; A. V. Kukin; O. S. El’tsina; L. V. Belyakov; E. I. Terukov; O. M. Sreseli


Book ID
111444894
Publisher
Springer
Year
2011
Tongue
English
Weight
142 KB
Volume
45
Category
Article
ISSN
1063-7826

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## Abstract We proposed a multi‐hollow discharge‐based plasma‐enhanced chemical vapor deposition (PECVD) technique with gas‐flow control for preparation of highly stable a‐Si:H films at high rates. The conditions for multi‐hollow plasma production have been optimized under radio‐frequency (RF) and