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Special features of the formation of Ge(Si) islands on the relaxed Si1−xGex/Si(001) buffer layers

✍ Scribed by N. V. Vostokov; Yu. N. Drozdov; Z. F. Krasil’nik; O. A. Kuznetsov; D. N. Lobanov; A. V. Novikov; M. V. Shaleev

No coin nor oath required. For personal study only.

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