Characterization of high quality RTCVD relaxed Si1−xGexgrown on ge graded buffer layers on Si by photoluminescence spectroscopy

✍ Scribed by G. Bremond; A. Souifi; O. De Baeros; A. Benmansour; F. Ducroquet; P. Warren; D. Dutartre

• Book ID: 112817144
• Publisher: Springer US
• Year: 1996
• Tongue: English
• Weight: 470 KB
• Volume: 25
• Category: Article
• ISSN: 0361-5235
• DOI: 10.1007/bf02659897