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Spatial distribution of impurities and defects introduced in diamond by high energy ion implantation

✍ Scribed by Varichenko, V. S. ;Zaitsev, A. M. ;Stelmakh, V. F.

Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
178 KB
Volume
95
Category
Article
ISSN
0031-8965

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Single crystal GaAs substrates implanted with high-energy 56 Fe ions have been optically investigated before and after annealing, over the photon energy range 0.1-1.4 eV. The spatial distribution of the damage has been probed by etching the sample and shows that defect density peaks at a depth of ab