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Depth distribution of defects and impurities in diamond and cubic boron nitride after high-energy ion implantation

✍ Scribed by Burenkov, A. F. ;Varychenko, V. S. ;Zaitsev, A. M. ;Komarov, F. F. ;Konoplyanik, G. G. ;Melnikov, A. A. ;Stelmakh, V. F. ;Tkachev, V. V.


Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
505 KB
Volume
115
Category
Article
ISSN
0031-8965

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High energy ion implantation into diamon
✍ Alexander M. Zaitsev πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 970 KB

The influence of ion implantation on diamond and cubic boron nitride is discussed. It is shown that high energy ion implantation (0.5 MeV nucleon-~ and higher) is a promising ion beam method of modification causing new effects in the superstrong semiconductors: (1) formation of multilayer impurity-d