High energy ion implantation into diamon
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Alexander M. Zaitsev
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Article
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1992
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Elsevier Science
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English
β 970 KB
The influence of ion implantation on diamond and cubic boron nitride is discussed. It is shown that high energy ion implantation (0.5 MeV nucleon-~ and higher) is a promising ion beam method of modification causing new effects in the superstrong semiconductors: (1) formation of multilayer impurity-d