Some chemical reaction engineering considerations in the synthesis of silicon nitride

✍ Scribed by Richard G. Pigeon; Arvind Varma

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 811 KB
• Volume: 47
• Category: Article
• ISSN: 0009-2509
• DOI: 10.1016/0009-2509(92)87097-a

✦ Synopsis

Elucidating the intrinsic nitridation behavior of silicon powder requires global or compact effects to be separated from the nitridation of the individual arains. These effects arise due to the influence of adjacent $uticles as they react, which modify the ma&pore structure aad subsequently alter the diffusivities of the reacting species. By careful acknowledgement of these factors during experimental design, intrinsic rate data has beeu obtained. Individual silicon graius react folIowing a sharp iuterfaee model, with au expanding Si& product layer developing on the outer surface. The reaction propagates towards the center of the particle via nitrogen diffusion through the product layer, followed by reaction with the underlying, uureacted silicon core. Diffusion through the product layer was determined to be rate-limiting.