SOI Structure pressure transducer formed by oxidized porous silicon
β Scribed by Zhao Ganming; Huang Yiping; Bao Minhang
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 523 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0924-4247
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## Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a βFull Textβ option. The original article is trackable v
A novel electroless method of producing porous silicon carbide (PSiC) is presented. Unlike anodic methods of producing PSiC, the electroless process does not require electrical contact during etching. Rather, platinum metal deposited on the wafer before etching serves as a catalyst for the reduction