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Soft X-ray emission spectroscopy of SiO2/Si structures irradiated with high-energy electrons

✍ Scribed by S. N. Shamin; V. R. Galakhov; S. Kaschieva; S. N. Dmitriev; A.G Belov

Book ID
111557068
Publisher
Springer US
Year
2003
Tongue
English
Weight
313 KB
Volume
14
Category
Article
ISSN
0957-4522

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## Abstract An X‐ray Si __L__~2,3~‐emission spectroscopy study of a SiO~2~/n‐Si heterostructure containing a thin oxide layer of __d__ = 20 nm thickness implanted by Si^+^ ions with an energy 12 keV is reported. The maximum concentration of implanted Si^+^ ions is located close to the SiO~2~–Si int