Si/SiGe quantum wells: fundamentals to technology

✍ Scribed by K. Ismail; B. S. Meyerson

• Book ID: 104631872
• Publisher: Springer US
• Year: 1995
• Tongue: English
• Weight: 476 KB
• Volume: 6
• Category: Article
• ISSN: 0957-4522
• DOI: 10.1007/bf00125885

✦ Synopsis

In this paper, we will briefly review the growth of Si/SiGe quantum wells and the effect of strain on the bandstructure. Enhanced el'ectron/hole transport properties in such layers will be demonstrated, and their application in electronic devices such as P and N modulationdoped field-effect transistors (MODFET) will be discussed. At the circuit level, the use of these devices in a complimentary metal-oxide-semiconductor (CMOS) circuit implementation will be considered.