SiO2 as an insulator for SiC devices

✍ Scribed by C.I. Harris; V.V. Afanas'ev

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 707 KB
• Volume: 36
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(97)00041-5

✦ Synopsis

The ability to form a thermal oxide on SiC is seen as being of key importance in the practical realisation of high power switching devices. To date efforts to reproduce the refined process technology possible in Si has met with limited success in SiC. In this paper we review current understanding of the oxidation technology used in SiC.