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Epitaxial insulator for bottom-gate field-effect devices based on TiO2

✍ Scribed by Masao Katayama; Hideomi Koinuma; Yuji Matsumoto

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 423 KB
Volume: 148
Category: Article
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2007.09.050

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