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Single-transistor-latch-induced degradation of front- and back-channel thin-film SOI transistors

✍ Scribed by Zhang, B.; Yoshino, A.; Ma, Tso-Ping


Book ID
118750699
Publisher
IEEE
Year
1992
Tongue
English
Weight
257 KB
Volume
13
Category
Article
ISSN
0741-3106

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## Abstract The trap states at the front and back oxide interfaces and grain boundaries of polycrystalline silicon thin‐film transistors are evaluated by using electrical characteristic analysis and device simulation. First, the method for extracting the trap densities of the front and back oxide i