Elimination of bipolar induced drain breakdown and single transistor latch in submicron PD SOI MOSFET

✍ Scribed by Kumar, M.J.; Verma, V.

• Book ID: 114668139
• Publisher: IEEE
• Year: 2002
• Tongue: English
• Weight: 233 KB
• Volume: 51
• Category: Article
• ISSN: 0018-9529
• DOI: 10.1109/tr.2002.801851