Study of the extended p+ dual source structure for eliminating bipolar induced breakdown in submicron SOI MOSFET's

✍ Scribed by Verma, V.; Kumar, M.J.

• Book ID: 114538265
• Publisher: IEEE
• Year: 2000
• Tongue: English
• Weight: 89 KB
• Volume: 47
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.853048