Elimination of parasitic bipolar-induced breakdown effects in ultra-thin SOI MOSFETs using narrow-bandgap-source (NBS) structure

✍ Scribed by Jai-Hoon Sim; Chang-Hoon Choi; Kinam Kim

• Book ID: 114536139
• Publisher: IEEE
• Year: 1995
• Tongue: English
• Weight: 648 KB
• Volume: 42
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.398664