Simultaneous effects of pressure and laser field on donors in GaAs/Ga1−xAlxAs quantum wells
✍ Scribed by N. Eseanu; E.C. Niculescu; L.M. Burileanu
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 554 KB
- Volume
- 41
- Category
- Article
- ISSN
- 1386-9477
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The high pressure behavior of electronic states in GaAs/GaA1As multiple quantum wells was investigated at 80K. It was found that the pressure dependen:e of the exciton energy £1~hh was nonlinear. The nonlinearity may be due to the pressureinduced transition of t'he Gal\_xAlxAS barrier layers from a
The effects of an applied electric field on subband energies and excitonic binding for a graded GaAlAs quantum well are calculated variationally within the effective mass approximation. The very sensitive dependence of subband energies on the applied field is calculated using a model potential profi