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High pressure behavior of electronic states in GaAs/Ga1−xAlxAs multiple quantum wells

✍ Scribed by Lijun Wang; Weiyi Jia; Ruming Tang; Yanyun Wang; Junming Zhou; Weikun Ge; Bingshen Wang

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
300 KB
Volume
7
Category
Article
ISSN
0749-6036

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✦ Synopsis

The high pressure behavior of electronic states in GaAs/GaA1As multiple quantum wells was investigated at 80K. It was found that the pressure dependen:e of the exciton energy £1~hh was nonlinear. The nonlinearity may be due to the pressureinduced transition of t'he Gal_xAlxAS barrier layers from a direct to an indirect band structure, and the resulting decrease of the effective barrier height.

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Hot electron energy and momentum relaxation in GaAs/AlAs and GaAs/Ga1-xAlxAs multiple quantum wells
✍ E. Oztürk; A. Straw; N. Balkan 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 195 KB

Experimental results on high electric field longitudinal transport in GaAs/AlAs and \(G a A s / G a_{1-x} A l_{x} A s\) multiple quantum wells (MQW) are presented and compared with the prediction of a dielectric continuum model. We draw from our experiments the following four conclusions. (i) In \(