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Simulations of C60 bombardment of Si, SiC, diamond and graphite

✍ Scribed by Kristin D. Krantzman; Roger P. Webb; Barbara J. Garrison


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
331 KB
Volume
255
Category
Article
ISSN
0169-4332

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Simulation of quality of SiC/Si interfac
✍ D. V. Kulikov; A. A. Schmidt; S. A. Korolev; F. M. Morales; Th. Stauden; Yu. V. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 112 KB

In the present paper we simulate the processes accompanying the SiC/Si epitaxial growth. The model suggested describes the formation and growth of voids at SiC/Si interface. These voids are sources of Si atoms for SiC growth. According to the model the size distribution function was obtained being i