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MD simulations on the melting and compression of C, SiC and Si nanotubes

✍ Scribed by Haijun Shen


Publisher
Springer
Year
2007
Tongue
English
Weight
319 KB
Volume
42
Category
Article
ISSN
0022-2461

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Simulation of quality of SiC/Si interfac
✍ D. V. Kulikov; A. A. Schmidt; S. A. Korolev; F. M. Morales; Th. Stauden; Yu. V. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 112 KB

In the present paper we simulate the processes accompanying the SiC/Si epitaxial growth. The model suggested describes the formation and growth of voids at SiC/Si interface. These voids are sources of Si atoms for SiC growth. According to the model the size distribution function was obtained being i