The collector current distribution of bipolar power transistors at high current densities has been calculated by quasi-two-dimensional device simulations and compared with infrared recombination radiation measurements. Further, modeling results concerning the influence of transistor doping profile a
β¦ LIBER β¦
Simulation of the dynamic behaviour of bipolar power transistors with PSPICE
β Scribed by Y. Lu
- Publisher
- Springer
- Year
- 1992
- Tongue
- English
- Weight
- 746 KB
- Volume
- 75
- Category
- Article
- ISSN
- 1432-0487
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