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Quasi-two-dimensional simulations of bipolar silicon power transistors

โœ Scribed by Wolf-Dieter Nowak; Heinrich Schlangenotto

Publisher
Elsevier Science
Year
1985
Weight
256 KB
Volume
129
Category
Article
ISSN
0378-4363

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โœฆ Synopsis

The collector current distribution of bipolar power transistors at high current densities has been calculated by quasi-two-dimensional device simulations and compared with infrared recombination radiation measurements. Further, modeling results concerning the influence of transistor doping profile and lateral geometry on the current distribution are reported.

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โœ F. Duhamel; J. C. De Jaeger; Y. Butel; M. Lefebvre; G. Salmer ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 322 KB

A quasi-two-dimensional model was performed for the analysis of dual-gate heterojunction field effect transistors. It constitutes a versatile tool for the understanding of transistor physical behavior and device optimization difficult to perform due to the large number of parameters to consider. The