Simulation of single electron circuits
✍ Scribed by W. Ro¨sner; F. Hofmann; T. Vogelsang; L. Risch
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 421 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0167-9317
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📜 SIMILAR VOLUMES
We introduce a single-electron device and circuit simulator, called SIMON, with the following features. Tunnel junctions, capacitors, constant voltage sources, piecewise-linear time-dependent voltage sources and voltage controlled voltage sources can be connected arbitrarily to form a single-electro
Simulated annealing is proposed as a simulation method for single-electron tunnel devices and circuits. Tunnel junctions, voltage sources and capacitors are used as elements for the construction of single-electron circuits. The simulator is applied successfully to the twostage tunnel junction invert