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Simulation of power heterojunction bipolar transistors on gallium arsenide

✍ Scribed by Palankovski, V.; Schultheis, R.; Selberherr, S.

Book ID
114538711
Publisher
IEEE
Year
2001
Tongue
English
Weight
116 KB
Volume
48
Category
Article
ISSN
0018-9383

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Modelling of heterojunction bipolar tran
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This work describes an approach for small signal modelling of GaAs-based ( ) ( heterojunction bipolar transistors HBTs for low-voltage r r r r r high-power application i.e., 4 2 ) V s 3 V, J s 3 = 10 A r r r r r cm . The parameter extraction procedure is discussed in ce c detail. Furthermore, it is