๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Simulation and design of InAlAs/InGaAs pnp heterojunction bipolar transistors

โœ Scribed by Datta, S.; Shen Shi; Roenker, K.P.; Cahay, M.M.; Stanchina, W.E.


Book ID
114537375
Publisher
IEEE
Year
1998
Tongue
English
Weight
204 KB
Volume
45
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Simulation study of InP-based PNP hetero
โœ S. Shi; K.P. Roenker; T. Kumar; M.M. Cahay; William E. Stanchina ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 335 KB

This paper describes a numerical approach to the modeling of PNP HBTs in the InP-based materials systems (InP/InGaAs and InAlAs/InGaAs). Initial device analysis was achieved in the drift-diffusion limit by self-consistent numerical solution of the Poisson, carrier continuity and conductor equations