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Simulation of interface effects during simultaneous deposition and ion irradiation

✍ Scribed by L. Pranevicius; C. Templier; J. Delafond; S. Muzard

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
880 KB
Volume
72
Category
Article
ISSN
0257-8972

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✍ D. V. Kulikov; A. A. Schmidt; S. A. Korolev; F. M. Morales; Th. Stauden; Yu. V. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 112 KB

In the present paper we simulate the processes accompanying the SiC/Si epitaxial growth. The model suggested describes the formation and growth of voids at SiC/Si interface. These voids are sources of Si atoms for SiC growth. According to the model the size distribution function was obtained being i