On the segregation of Ca at SiO2/Si inte
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Deenapanray, Prakash N. K.; Petravic, Mladen
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Article
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2000
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John Wiley and Sons
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English
⚖ 128 KB
Segregation of Ca in Si has been studied using SIMS and RBS. Pronounced Ca profile broadening is observed during SIMS measurements with oxygen ions under bombardment conditions, yielding the formation of a stoichiometric oxide layer at the surface. Additional profiling through the SiO 2 /Si interfac